04072974 is referenced by 32 patents and cites 4 patents.

A resistive device for use as a current feedback loop in an integrated CMOS shift register circuit is made of an island of polycrystalline silicon with a sheet resistivity of from 10.sup.6 to 10.sup.8 ohms per square. The polycrystalline silicon island has two contacts thereon fashioned in the manner of MOS source and drain contacts and a dummy polycrystalline silicon insulated gate contact thereon. The device structure is designed to be and is fully compatible with CMOS mesa processing. The method for making the device incorporates into the processing steps for CMOS manufacture the formation of polycrystalline silicon islands on the substrate along with monocrystalline silicon islands. In the process, the polycrystalline silicon island is doped, through source and drain mask openings, with impurities of the same conductivity type as that predominating in the polycrystalline silicon island.

Title
Silicon resistive device for integrated circuits
Application Number
491115
Publication Number
4072974
Application Date
November 18, 1976
Publication Date
February 7, 1978
Inventor
Alfred C Ipri
Marlton
NJ, US
Agent
Donald S Cohen
R P Williams
H Christoffersen
Assignee
RCA
NY, US
IPC
H01L 29/04
H01L 27/12
H01L 27/02
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