04058430 is referenced by 641 patents and cites 7 patents.

A method is provided for growing highly oriented compound thin films on a substrate by subjecting the substrate to the vapor of a first single element which can react with the surface at a temperature sufficiently high for the reaction to occur which forms a single atomic layer of the first single element on the surface and then subjecting the thus formed surface with a first single element atomic layer thereon to the vapor of a second single element which can react with the first single element at a temperature sufficiently high for the reaction to occur so that a single atomic layer of the second single element is formed on the surface bound to the first single element. This procedure can then be repeated alternately subjecting the surface to the vapors of the first single element then to the second single element, etc. until the compound film reaches a desired thickness. There is further provided an apparatus for carrying out this method comprising a vacuum chamber with evacuating means, a support for supporting a substrate, sources for at least two vapors of two different single elements and operating means for providing on the substrate first a single atomic layer of one of the elements, and then a single atomic layer of the other of the elements.

Title
Method for producing compound thin films
Application Number
5/635233
Publication Number
4058430
Application Date
November 25, 1975
Publication Date
November 15, 1977
Inventor
Jorma Antson
Urheilutie 22, 01350, Vantaa 35
SF
Tuomo Suntola
Riihikallio, 02610 Espoo 61
SF
Agent
Steinberg & Blake
IPC
B05D 5/12
B05D 5/00
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