04057460 is referenced by 20 patents and cites 2 patents.

An improved plasma etching process. There is disclosed apparatus and method (or process) for etching patterns in metal films deposited on a semiconductor wafer. This improved process is particularly useful in the fabrication of certain semiconductor devices, such as MOS and bipolar integrated circuits and Schottky transistors (semiconductor/metal interfaces) which employ contact "fingers". The fingers are constructed from layers of metal, such as aluminum, tungsten, and titanium with aluminum being the outermost layer.

Title
Plasma etching process
Application Number
5/743734
Publication Number
4057460
Application Date
November 22, 1976
Publication Date
November 8, 1977
Inventor
Courtney Hart
San Jose
CA, US
Arjun N Saxena
Palo Alto
CA, US
Agent
Jacob Frank
Joel Wall
Assignee
Data General Corporation
MA, US
IPC
C23F 1/02
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