03971684 is referenced by 53 patents and cites 7 patents.

A method is provided for etching thin film circuits or semiconductor chips to produce well defined vertically etched walls at rapid etching rates. The substrates to be etched are covered by masks and positioned on a cathode electrode enclosed in a container. Also enclosed in the container is a chemically-reactive gas used as an etchant. According to the method the cathode is negative-biased to ionize the reactive gas and attract the chemically reactive ions toward the cathode. These reactive ions impinge on the substrates in a predominantly vertical direction to produce well defined vertically etched walls.

Title
Etching thin film circuits and semiconductor chips
Application Number
420990
Publication Number
3971684
Application Date
April 14, 1975
Publication Date
July 27, 1976
Inventor
Steve Yoneo Muto
Cupertino
CA, US
Agent
Ronald E Grubman
Assignee
Hewlett Packard Company
CA, US
IPC
C09K 13/00
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