Generally, the subject matter disclosed herein relates to modern sophisticated semiconductor devices and methods for forming the same, wherein a multilayer metal fill may be used to fill narrow openings formed in an interlayer dielectric layer. One illustrative method disclosed herein includes forming an opening in a dielectric material layer of a semiconductor device formed above a semiconductor substrate, the opening having sidewalls and a bottom surface. The method also includes forming a first layer of first fill material above the semiconductor device by forming the first layer inside the opening and at least above the sidewalls and the bottom surface of the opening. Furthermore, the method includes performing a first angled etching process to at least partially remove the first layer of first fill material from above the semiconductor device by at least partially removing a first portion of the first layer proximate an inlet of the opening without removing a second portion of the first layer proximate the bottom of said opening, and forming a second layer of second fill material above the semiconductor device by forming the second layer inside the opening and above the first layer.

Title
Filling Narrow Openings Using Ion Beam Etch
Application Number
13/036113
Publication Number
20120217590
Application Date
February 28, 2011
Publication Date
August 30, 2012
Inventor
Eugene J O Sullivan
Nyack
NY, US
Christopher D Sheraw
Wappingers Falls
NY, US
Alessandro C Callegari
Yorktown Heights
NY, US
Katherina E Babich
Chappaqua
NY, US
Assignee
Globalfoundries
IPC
H01L 21/4763
H01L 29/78
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