The invention relates to a process for manufacturing a single crystal comprising a rare-earth halide, having improved machining or cleavage behaviour, comprising heat treatment in a furnace, the atmosphere of which is brought, for at least 1 hour, to between 0.70 times Tm and 0.995 times Tm of a single crystal comprising a rare-earth halide, Tm representing the melting point of said single crystal, the temperature gradient at any point in the atmosphere of the furnace being less than 15 K/cm for said heat treatment. After carrying out the treatment according to the invention, the single crystals may be machined or cleaved without uncontrolled fracture. The single crystals may be used in a medical imaging device, especially a positron emission tomography system or a gamma camera or a CT scanner, for crude oil exploration, for detection and identification of fissile or radioactive materials, for nuclear and high-energy physics, for astrophysics or for industrial control.

Title
Annealing of single crystals
Application Number
12/121459
Publication Number
20090246495
Application Date
May 15, 2008
Publication Date
October 1, 2009
Inventor
Vladimir Ouspenski
Alain Iltis
Dominique Richaud
Agent
Larson Newman & Abel
TX, US
Assignee
Saint Gobain Cristaux Et Detecteurs
IPC
B32B 09/00
C30B 15/14
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