A method is provided for fabricating a unit including a semiconductor element such as a sensor unit, e.g., for optical imaging. A semiconductor element has plurality of conductive features exposed at the front surface and semiconductive or conductive material exposed at least one of the front and rear surfaces. At least some of the conductive features are insulated from the exposed semiconductive or conductive material. By electrodeposition, an insulative layer is formed to overlie the at least one of exposed semiconductive material or conductive material. Subsequently, a plurality of conductive contacts and a plurality of conductive traces are formed overlying the electrodeposited insulative layer, the conductive traces connecting the conductive features to the conductive contacts. The unit can be incorporated in a camera module having an optical element in registration with an imaging area of the semiconductor element.

Title
Wafer-level fabrication of lidded chips with electrodeposited dielectric coating
Application Number
11/590616
Publication Number
20080099900
Application Date
October 31, 2006
Publication Date
May 1, 2008
Inventor
Giles Humpston
Belgacem Haba
Saratoga
CA, US
Charles Rosenstein
David Ovrutsky
Vage Oganesian
Palo Alto
CA, US
Agent
LERNER DAVID et al
NJ, US
Agent
Tessera
NJ, US
Assignee
Tessera Technologies Hungary Kft
IPC
H01L 23/02
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