Dual channel heterostructures comprising strained Si and strained Ge-containing layers are disclosed, along with methods for producing such structures. In preferred embodiments, a strain-relaxed buffer layer is deposited on a carrier substrate, a strained Si layer is deposited over the strain-relaxed buffer layer and a strained Ge-containing layer is deposited over the strained Si layer. The structure can be transferred to a host substrate to produce the strained Si layer over the strained Ge-containing layer. By depositing the Si layer first, the process avoids Ge agglomeration problems.

Title
Dual channel heterostructure
Application Number
11/485047
Publication Number
20080014721
Application Date
July 11, 2006
Publication Date
January 17, 2008
Inventor
Matthias Bauer
Phoenix
AZ, US
Agent
Knobbe Martens Olsen & Bear
CA, US
IPC
H01L 21/20
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