A germanium-based photodetector comprises a p- (or n-type) germanium layer, an intrinsic single crystal germanium layer formed on the p- (or n-) type germanium layer, and an n- (or p-type) germanium layer formed on the intrinsic single crystal germanium layer. An electrically conductive contact extends vertically from an upper surface of the photodetector device downward to the buried layer. Electrodes formed on the upper surface of the photodetector device define front side contacts.

Title
Photodetectors employing germanium layers
Application Number
11/433200
Publication Number
20070262296
Application Date
May 11, 2006
Publication Date
November 15, 2007
Inventor
Matthias Bauer
Phoenix
AZ, US
Agent
Knobbe Martens Olsen & Bear
CA, US
IPC
H01L 31/00
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