A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.

Title
Process of making a semiconductor device using multiple antireflective materials
Application Number
11/356027
Publication Number
20070196748
Application Date
February 17, 2006
Publication Date
August 23, 2007
Inventor
Dirk Pfeiffer
Dobbs Ferry
NY, US
Arpan P Mahorowala
Bronxville
NY, US
Scott D Halle
Hopewell Junction
NY, US
Allen H Gabor
Katonah
NY, US
Richard A Conti
Katonah
NY, US
Sean D Burns
Hopewell Junction
NY, US
Katherina E Babich
Chappaqua
NY, US
Marie Angelopoulos
Cortlandt Manor
NY, US
Agent
Connolly Bove Lodge & Hutz
DE, US
Assignee
International Business Machines Corporation
NY, US
IPC
G03G 13/00
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