A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films having dielectric constants of less than 3.0, more preferably 2.8 to 2.0.

Title
Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films
Application Number
11/452875
Publication Number
20060235182
Application Date
June 14, 2006
Publication Date
October 19, 2006
Inventor
Ravi K Laxman
San Jose
CA, US
Scott Battle
James TY Lin
Austin
TX, US
Ziyun Wang
New Milford
CT, US
Alexander S Borovik
Hartford
CT, US
Thomas H Baum
New Fairfield
CT, US
Chongying Xu
New Milford
CT, US
Agent
Intellectual Property Technology Law
NC, US
IPC
B32B 09/04
C08G 77/34
C08G 77/04
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