The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Title
Strained-semiconductor-on-insulator finFET device structures
Application Number
11/211933
Publication Number
20050280103
Application Date
August 25, 2005
Publication Date
December 22, 2005
Inventor
Eugene A Fitzgerald
Windham
NH, US
Anthony J Lochtefeld
Somerville
MA, US
Richard Hammond
Glyn Braithwaite
Hooksett
NH, US
Matthew T Currie
Brookline
MA, US
Thomas A Langdo
Cambridge
MA, US
Agent
Goodwin Procter
MA, US
Assignee
AmberWave Systems Corporation
NH, US
IPC
H01L 21/336
H01L 29/76
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