A semiconductor-based structure includes first, second, and intermediate layers, with the intermediate layer bonded directly to the first layer, and in contact with the second layer. Parallel to the bonded interface, the lattice spacing of the second layer is different than the lattice spacing of the first layer, though first and second layers are each formed of essentially the same semiconductor. A method for making a semiconductor-based structure includes directly bonding a first layer to an intermediate layer, and providing a second layer in contact with the intermediate layer.

Title
Semiconductor devices having bonded interfaces and methods for making the same
Application Number
10/956485
Publication Number
20050280081
Application Date
October 1, 2004
Publication Date
December 22, 2005
Inventor
Eugene A Fitzgerald
Windham
NH, US
Gianni Taraschi
Somerville
MA, US
David M Isaacson
Boston
MA, US
Agent
Wolf Greenfield & Sacks PC
MA, US
Agent
Jamie H Rose
MA, US
Assignee
Massachusetts Institute of Technology
MA, US
IPC
H01L 31/336
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