A semiconductor-based structure includes a substrate layer, a compressively strained semiconductor layer adjacent to the substrate layer to provide a channel for a component, and a tensilely strained semiconductor layer disposed between the substrate layer and the compressively strained semiconductor layer. A method for making an electronic device includes providing, on a strain-inducing substrate, a first tensilely strained layer, forming a compressively strained layer on the first tensilely strained layer, and forming a second tensilely strained layer on the compressively strained layer. The first and second tensilely strained layers can be formed of silicon, and the compressively strained layer can be formed of silicon and germanium.

Title
Strained tri-channel layer for semiconductor-based electronic devices
Application Number
10/869463
Publication Number
20050279992
Application Date
June 16, 2004
Publication Date
December 22, 2005
Inventor
Eugene A Fitzgerald
Windham
NH, US
Minjoo Larry Lee
Cambridge
MA, US
Saurabh Gupta
Cambridge
MA, US
Agent
Wolf Greenfield & Sacks PC
MA, US
Agent
Jamie H Rose
MA, US
IPC
H01L 29/06
H01L 21/3205
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