A pinned photodiode with a surface layer of a first conductivity type laterally displaced from an electrically active area of a gate structure and a charge collection region of a second conductivity type formed by an angled implant is disclosed. The angle of the charge collection region implant may be tailored so that the charge collection region contacts an adjacent edge of the transfer gate of the pixel sensor cell and minimizes, therefore, the gate overlap region and an undesirable barrier potential.

Title
Angled pinned photodiode for high quantum efficiency and method of formation
Application Number
10/629679
Publication Number
20050023553
Application Date
July 30, 2003
Publication Date
February 3, 2005
Inventor
Howard E Rhodes
Boise
ID, US
Agent
Dickstein Shapiro Morin & Oshinsky
DC, US
IPC
H01L 29/74
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