The invention is directed to unique high-surface area BEOL capacitor structures with high-k dielectric layers and methods for fabricating the same. These high-surface area BEOL capacitor structures may be used in analog and mixed signal applications. The capacitor is formed within a trench with pedestals within the trench to provide additional surface area. The top and bottom electrodes are created using damascene integration scheme. The dielectric layer is created as a multilayer dielectric film comprising for instance Al2O3, Al2O3/Ta2O5, Al2O3/Ta2O5/Al2O3 and the like. The dielectric layer may be deposited by methods like atomic layer deposition or chemical vapor deposition. The dielectric layer used in the capacitor may also be produced by anodic oxidation of a metallic precursor to yield a high dielectric constant oxide layer.

Title
Damascene integration scheme for developing metal-insulator-metal capacitors
Application Number
10/319724
Publication Number
20040113235
Application Date
December 13, 2002
Publication Date
June 17, 2004
Inventor
Richard P Volant
New Fairfield
CT, US
Kunal Vaed
Poughkeepsie
NY, US
Kenneth J Stein
Sandy Hook
CT, US
Ebenezer E Eshun
Essex Junction
VT, US
John M Cotte
New Fairfield
CT, US
Douglas D Coolbaugh
Essex Junction
VT, US
Agent
Delio & Peterson
CT, US
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 21/20
H01L 29/00
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