20040075149-A1 is referenced by 1 patents.

A CMOS inverter having a heterostructure including a Si substrate, a relaxed Si1xGex layer on the Si substrate, and a strained surface layer on said relaxed Si1xGex layer; and a pMOSFET and an nMOSFET, wherein the channel of said pMOSFET and the channel of the nMOSFET are formed in the strained surface layer. Another embodiment provides an integrated circuit having a heterostructure including a Si substrate, a relaxed Si1xGex layer on the Si substrate, and a strained layer on the relaxed Si1xGex layer; and a p transistor and an n transistor formed in the heterostructure, wherein the strained layer comprises the channel of the n transistor and the p transistor, and the n transistor and the p transistor are interconnected in a CMOS circuit.

Title
CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
Application Number
10/625018
Publication Number
20040075149
Application Date
July 23, 2003
Publication Date
April 22, 2004
Inventor
Nicole Gerrish
Cambridge
MA, US
Eugene A Fitzgerald
Windham
NH, US
Agent
Testa Hurwitz & Thibeault
MA, US
Assignee
Amberwave Systems Corporation
NH, US
IPC
H01L 29/76
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