20040039219-A1 is referenced by 2 patents.

A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature deposition reactions occurring in the heated environment of the CVD delivery lines and process hardware.

Title
Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films
Application Number
10/650282
Publication Number
20040039219
Application Date
August 28, 2003
Publication Date
February 26, 2004
Inventor
Alexander S Borovik
W Hartford
CT, US
Ravi K Laxman
San Jose
CA, US
Thomas H Baum
New Fairfield
CT, US
Chongying Xu
New Milford
CT, US
Tianniu Chen
Rocky Hill
CT, US
Agent
Atmi
CT, US
IPC
C07F 07/08
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