20040029330-A1 is referenced by 1 patents.

A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An encapsulation layer is used to cover the channel and ohmic metal contacts. The present invention provides a substrate on which a plurality of semiconductor layers are deposited. The semiconductor layers act as the channel of the device. The semiconductor layers are covered with an encapsulation layer. A portion of the encapsulation layer and the plurality of semiconductor layers are removed, wherein ohmic metal contacts are deposited. The ohmic metal contacts are then annealed to help reduce their resistance. The encapsulation layer ensures that the ohmic metal contacts do not migrate during the annealing step and that the channel is not harmed by the high temperatures needed during the annealing step.

Title
Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
Application Number
10/634348
Publication Number
20040029330
Application Date
August 4, 2003
Publication Date
February 12, 2004
Inventor
Ara K Kurdoghlian
Flintridge
CA, US
Gary Peng
San Gabriel
CA, US
Paul Hashimoto
Los Angeles
CA, US
Miroslav Micovic
Newbury Park
CA, US
Tahir Hussain
Calabasas
CA, US
Agent
c o LADAS & PARRY
CA, US
Agent
Ross A Schmitt Esq
CA, US
IPC
H01L 21/338
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