20030116421-A1 is referenced by 1 patents.
A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films having dielectric constants of less than 3.0, more preferably 2.8 to 2.0.
- Title
-
Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films
- Application Number
-
10/015326
- Publication Number
-
20030116421
- Application Date
-
December 13, 2001
- Publication Date
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June 26, 2003
- Inventor
-
Ravi K Laxman
San Jose
CA, US
Scott Battle
James TY Lin
Austin
TX, US
Ziyun Wang
New Milford
CT, US
Alexander S Borovik
Hartford
CT, US
Thomas H Baum
New Fairfield
CT, US
Chongying Xu
New Milford
CT, US
- Agent
-
Intellectual Property Technology Law
NC, US
- IPC
-
B01D 03/34
C07C 07/20
Ravi Laxman