20030064154-A1 is referenced by 2 patents.

A CVD process for producing low-dielectric constant, SiOC thin films using organosilicon precursor compositions having at least one alkyl group and at least one cleavable organic functional group that when activated rearranges and cleaves as a highly volatile liquid or gaseous by-product. In a first step, a dense SiOC thin film is CVD deposited from the organosilicon precursor having at least one alkyl group and at least one cleavable organic functional group, having retained therein at least a portion of the alkyl and cleavable organic functional groups. In a second step, the dense SiOC thin film is post annealed to effectively remove the volatile liquid or gaseous by-products, resulting in a porous low-dielectric constant SiOC thin film. The porous, low dielectric constant, SiOC thin films are useful as insulating layers in microelectronic device structures. Preferred porous, low-dielectric SiOC thin films are produced using di(formato)dimethylsilane as the organosilicon precursor.

Title
Low-K dielectric thin films and chemical vapor deposition method of making same
Application Number
10/213395
Publication Number
20030064154
Application Date
August 6, 2002
Publication Date
April 3, 2003
Inventor
Thomas H Baum
New Fairfield
CT, US
Chongying Xu
Milford
CT, US
Ravi K Laxman
San Jose
CA, US
Agent
ATMI
CT, US
Agent
Margaret Chappuis
CT, US
IPC
C23C 16/00
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