20030040158-A1 is referenced by 6 patents.

A semiconductor device improves the electron mobility in the n-channel MOSFET and reduces the bend or warp of the semiconductor substrate or wafer. The fist nitride layer having a tensile stress is formed on the substrate to cover the n-channel MOSFET. The tensile stress of the first nitride layer serves to relax a compressive stress existing in the channel region. The second nitride layer having an actual compressive stress is formed on the substrate to cover the p-channel MOSFET. The first and second nitride layers serve to decrease bend or warp of the substrate. Preferably, the first nitride layer is a nitride layer of Si formed by a LPCVD process, and the second nitride layer is a nitride layer of Si formed by a PECVD process.

Title
Semiconductor device and method of fabricating the same
Application Number
10/224959
Publication Number
20030040158
Application Date
August 21, 2002
Publication Date
February 27, 2003
Inventor
Takehiro Saitoh
Agent
Scully Scott Murphy & Presser PC
NY, US
Assignee
NEC Corporation
IPC
H01L 21/336
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