20030025131-A1 is referenced by 3 patents.

A structure and a method for forming the structure, the method including forming a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer is formed over the compressively strained layer. The compressively strained layer is substantially planar, having a surface roughness characterized in (i) having an average wavelength greater than an average wavelength of a carrier in the compressively strained layer or (ii) having an average height less than 10 nm.

Title
Formation of planar strained layers
Application Number
10/211126
Publication Number
20030025131
Application Date
August 2, 2002
Publication Date
February 6, 2003
Inventor
Eugene A Fitzgerald
Windham
NH, US
Christopher W Leitz
Nashua
NH, US
Minjoo L Lee
Cambridge
MA, US
Agent
Testa Hurwitz & Thibeault
MA, US
Assignee
Massachusetts Institute of Technology
MA, US
IPC
C30B 01/00
H01L 31/336
H01L 21/8234
View Original Source