20020197803-A1 is referenced by 1 patents.

A structure includes a tensile strained layer disposed over a substrate, the tensile strained layer having a first thickness. A compressed layer is disposed between the tensile strained layer and the substrate, the compressed layer having a second thickness. The first and second thicknesses are selected to define a first carrier mobility in the tensile strained layer and a second carrier mobility in the compressed layer.

Title
Enhancement of p-type metal-oxide-semiconductor field effect transistors
Application Number
10/177571
Publication Number
20020197803
Application Date
June 21, 2002
Publication Date
December 26, 2002
Inventor
Eugene A Fitzgerald
Windham
NH, US
Minjoo L Lee
Cambridge
MA, US
Christopher W Leitz
Nashua
NH, US
Agent
Testa Hurwitz & Thibeault
MA, US
Assignee
AmberWave Systems Corporation
NH, US
IPC
H01L 21/336
H01L 21/8238
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