The field effect device consisting of a substrate, a conducting backplane formed in the substrate, a source and a drain disposed above the conductive backplane, a gate insultatively disposed above the substrate between the source and drain, and a backgate contact electrically coupled to the conducting backplane.

Title
Field effect transistor and method for making the same
Application Number
10/147550
Publication Number
20020175346
Application Date
May 17, 2002
Publication Date
November 28, 2002
Inventor
Berinder Brar
Newbury Park
CA, US
Agent
Baker Botts
TX, US
Agent
Jerry W Mills Esq
TX, US
Assignee
Raytheon Company
IPC
H01L 21/336
H01L 35/26
H01L 31/328
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