20020172766-A1 is referenced by 1 patents.

A CVD process for producing low-dielectric constant, SiOC thin films using organosilicon precursor compositions having at least one alkyl group and at least one cleavable organic functional group that when activated rearranges and cleaves as a highly volatile liquid or gaseous by-product. In a first step, a dense SiOC thin film is CVD deposited from the organosilicon precursor having at least one alkyl group and at least one cleavable organic functional group, having retained therein at least a portion of the alkyl and cleavable organic functional groups. In a second step, the dense SiOC thin film is post annealed to effectively remove the volatile liquid or gaseous by-products, resulting in a porous low-dielectric constant SiOC thin film. The porous, low dielectric constant, SiOC thin films are useful as insulating layers in microelectronic device structures. Preferred porous, low-dielectric SiOC thin films are produced using di(formato)dimethylsilane as the organosilicon precursor.

Title
Low dielectric constant thin films and chemical vapor deposition method of making same
Application Number
9/811106
Publication Number
20020172766
Application Date
March 17, 2001
Publication Date
November 21, 2002
Inventor
Thomas H Baum
New Fairfield
CT, US
Chongying Xu
New Milford
CT, US
Ravi K Laxman
San Jose
CA, US
Agent
ATMI
CT, US
Agent
Oliver A Zitzmann
CT, US
IPC
C07F 07/08
C07F 07/04
C23C 16/00
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