20020109168-A1 is referenced by 5 patents.

A ferroelectric memory device along with a method of forming the same are provided. A first interlayer insulating layer is formed on a semiconductor substrate. A buried contact structure is formed on the first interlayer insulating layer. The buried contact structure is electrically connected to the substrate through a first contact hole extending through the first interlayer insulating layer. A blocking layer covers or encapsulates the buried contact structure and the first interlayer insulating layer. A second interlayer insulating layer is formed on the blocking layer. A ferroelectric capacitor formed on the second interlayer insulating layer and is electrically connected to the buried contact structure through a second contact hole that penetrates the second interlayer insulating layer and the blocking layer.

Title
Ferroelectric memory device and method of forming the same
Application Number
10/066172
Publication Number
20020109168
Application Date
January 30, 2002
Publication Date
August 15, 2002
Inventor
Yoon Jong Song
Ki Nam Kim
Agent
MARGER JOHNSON & McCOLLOM PC
OR, US
Assignee
Samsung Electronics
IPC
H01L 29/94
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