20020109150-A1 is referenced by 6 patents.

A semiconductor device according to an aspect of the present invention includes a substrate having a semiconductor substrate and a semiconductor layer provided on the semiconductor substrate, said semiconductor layer being insulated by an insulating film; a thyristor with a gate, its pnpn structure being laterally formed in said semiconductor layer of said substrate; and a transistor formed in said semiconductor layer of said substrate; said transistor being connected to one terminal of said thyristor. A method of manufacturing a semiconductor device according to other aspect of the present invention includes defining an element forming region isolated by an element isolation insulation film in a semiconductor layer of a first conductivity type provided on a semiconductor substrate, said semiconductor layer being insulated by an insulation film provided on the semiconductor substrate; forming a second base region of a first conductivity type in said element forming region; forming a first gate electrode of the thyristor and a second gate of the transistor above said second base region, said first and second gate electrodes being arranged in parallel; implanting ions to form a source and drain diffused regions of the second conductivity at both sides of said second gate electrode, and to form, at the same time, a second emitter region of the second conductivity type and a first base region, one of said source and drain diffused regions and said second emitter region being common region; providing a hole penetrating said first base region and said insulating film under said base region; and filling said hole with material of the first conductivity type to obtain a plug member as a first emitter region which contacts said semiconductor substrate.

Title
Semiconductor device and manufacturing method thereof
Application Number
10/073338
Publication Number
20020109150
Application Date
February 13, 2002
Publication Date
August 15, 2002
Inventor
Takeshi Kajiyama
Agent
Oblon Spivak Mcclelland Maier & Neustadt PC
VA, US
Assignee
Kabushiki Kaisha Toshiba
IPC
H01L 29/74
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