20020086472-A1 is referenced by 5 patents.

A method for forming a strain layer on an underside of a channel in an MOS transistor in order to produce a mechanical stress in the channel, increasing a mobility of carriers in the channel and an apparatus produced from such a method.

Title
Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel
Application Number
9/752333
Publication Number
20020086472
Application Date
December 29, 2000
Publication Date
July 4, 2002
Inventor
Brian S Doyle
Portland
OR, US
Brian Roberds
Beaverton
OR, US
Agent
Blakely Sokoloff Taylor & Zafman
CA, US
IPC
H01L 31/119
H01L 31/117
H01L 21/302
H01L 21/461
H01L 31/113
H01L 31/62
H01L 29/94
H01L 21/8234
H01L 21/336
H01L 29/76
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