20020086111-A1 is referenced by 4 patents.

A method of forming a refractory metal nitride layer for integrated circuit fabrication is disclosed. In one embodiment, the refractory metal nitride layer is formed by chemisorbing monolayers of a hydrazine-based compound and one or more refractory metal compounds onto a substrate. In an alternate embodiment, the refractory metal nitride layer has a composite structure, which is composed of two or more refractory metals. The composite refractory metal nitride layer is formed by sequentially chemisorbing monolayers of a hydrazine-based compound and two or more refractory metal compounds on a substrate.

Title
Method of forming refractory metal nitride layers using chemisorption techniques
Application Number
9/754230
Publication Number
20020086111
Application Date
January 3, 2001
Publication Date
July 4, 2002
Inventor
Alfred Mak
Union City
CA, US
Jeong Soo Byun
Cupertino
CA, US
Agent
Applied Materials
CA, US
IPC
C23C 16/00
C23C 16/22
C23C 16/34
H01L 23/48
H01L 29/40
H01L 21/44
B32B 09/00
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