The invention is directed to unique high-surface area BEOL capacitor structures with high-k dielectric layers and methods for fabricating the same. These high-surface area BEOL capacitor structures may be used in analog and mixed signal applications. The capacitor is formed within a trench with pedestals within the trench to provide additional surface area. The top and bottom electrodes are created using damascene integration scheme. The dielectric layer is created as a multilayer dielectric film comprising for instance Al2O3, Al2O3/Ta2O5, Al2O3/Ta2O5/Al2O3 and the like. The dielectric layer may be deposited by methods like atomic layer deposition or chemical vapor deposition. The dielectric layer used in the capacitor may also be produced by anodic oxidation of a metallic precursor to yield a high dielectric constant oxide layer.

Title
Damascene integration scheme for developing metal-insulator-metal capacitors
Application Number
092130320
Publication Number
I286384
Application Date
October 30, 2003
Publication Date
September 1, 2007
Inventor
Vaed Kunal
Stein Kenneth J
Eshun Ebenezer E
Cotte John M
Coolbaugh Douglas D
Assignee
International Business Machines Corporation
IPC
H01L 029/00