569350 is referenced by 23 patents.

A method for fabricating a polysilicon layer comprises steps of: (a) providing a substrate; (b) forming a buffer layer having a plurality of trenches on the substrate; (c) forming an amorphous silicon layer on the buffer layer; and (d) performing a laser annealing process, wherein during the laser annealing process, the amorphous silicon layer is molten, and then the lateral crystallization starts from the bottom of the trenches. The invention is used for fabricating an LTPS LCD, and the grain size and uniformity of the polysilicon layer formed by the method is enhanced.

Title
Method for fabricating a polysilicon layer
Application Number
091132242
Publication Number
569350
Application Date
October 31, 2002
Publication Date
January 1, 2004
Inventor
Tsao Yi Chang
Assignee
Au Optronics Corporation
IPC
H01L 021/324