568882 is referenced by 10 patents.
A specific nano-interfacial structure is fabricated from self-organization, which induced, by chemical kinetics differences between reactants in a sputtering process. The self-organized nano-interface has nano-scale size and gradual composition variation. The self-organized nano-interface possesses itself electric property that is different to the both sides of the nano-interface. Using the differential electric properties of self-organized nano-interface and its both sides, the nano-interfacial structure shows properties of a diode by rectifiable effect in an electric potential specific range. Reproducing the self-organized nano-interface to form the nano-scale multi-layer structure, that will be applied to double barrier resonant tunneling diode, resonant tunneling transistor, and so on. The applications of the nano-interfacial structure for manufacturing diodes, transistors, light-emitters and sonic devices, have the advantage of extensively material options, easier production controlling, higher production compatibility and lower cost.