1020000036733 is referenced by 9 patents.

PURPOSE: A method for planarizing an interlayer dielectric of a semiconductor device is provided to improve a step coverage and to easily perform a subsequent process, by filling an interlayer dielectric between ultra-fine patterns without a void and by performing a planarization process. CONSTITUTION: A plurality of conductive layer patterns(22) are formed on a semiconductor substrate(21). The first passivation layer(23) is formed on the conductive layer pattern. A wet-etch process is performed to remove impurities on the first passivation layer. A plasma treatment is performed regarding the surface of the first passivation layer to improve adhesion and planarization of the subsequent interlayer dielectric. A SiOxHy layer(25) is formed on the plasma-treated first passivation layer by using a low pressure chemical vapor deposition(LPCVD) method. The step of the SiOxHy layer is decreased in a mixture gas atmosphere using reaction source of H2O2, H2O, O2 and inert gas. The second passivation layer(26) is formed to prevent the SiOxHy layer from cracking by a subsequent heat treatment process. The SiOxHy layer is densified.

Method for planarizing interlayer dielectric of semiconductor device
Application Number
Publication Number
Application Date
June 30, 2000
Publication Date
January 10, 2002
Ahn Sang Tae
Hynix Semiconductor
H01L 21/31