2008-122932 is referenced by 125 patents.

PROBLEM TO BE SOLVED: To provide a resist material having good barrier performance to water, capable of suppressing dissolution of a resist film thereof in water, having a large backward contact angle to water, capable of eliminating liquid droplet residues, having excellent process applicability without requiring a protective film, and effective for liquid immersion lithography, and a pattering process using such a material.SOLUTION: The resist material comprises a polymer comprising recurring units of formulae (a-1), (a-2), (a-3) and b, wherein R1, R4, R7 and R14 are H or methyl; R2, R3, R15 and R16 are H, alkyl or fluoroalkyl; R5 is alkylene; R6 is fluorinated alkyl; R8 is a single bond or alkylene; R10 and R11 are H, F, methyl or trifluoromethyl; R12 and R13 are a single bond, -O- or -CR18R19-; R9, R18 and R19 are H, F, methyl or trifluoromethyl; R17 is alkylene; X1, X2 and X3 are -C(=O)-O-, -O- or -C(=O)-R20-C(=O)-O- wherein R20 is alkylene; 0≤(a-1)

Resist material and patterning process using the same
Application Number
Publication Number
Application Date
October 3, 2007
Publication Date
May 29, 2008
Kusaki Wataru
Harada Yuji
Yoshihara Takao
Hatakeyama Jun
Shin Etsu Chem
H01L 21/027
G03F 07/38
G03F 07/038
G03F 07/039
G03F 07/004