2008-122932 is referenced by 123 patents.

PROBLEM TO BE SOLVED: To provide a resist material having good barrier performance to water, capable of suppressing dissolution of a resist film thereof in water, having a large backward contact angle to water, capable of eliminating liquid droplet residues, having excellent process applicability without requiring a protective film, and effective for liquid immersion lithography, and a pattering process using such a material.SOLUTION: The resist material comprises a polymer comprising recurring units of formulae (a-1), (a-2), (a-3) and b, wherein R1, R4, R7 and R14 are H or methyl; R2, R3, R15 and R16 are H, alkyl or fluoroalkyl; R5 is alkylene; R6 is fluorinated alkyl; R8 is a single bond or alkylene; R10 and R11 are H, F, methyl or trifluoromethyl; R12 and R13 are a single bond, -O- or -CR18R19-; R9, R18 and R19 are H, F, methyl or trifluoromethyl; R17 is alkylene; X1, X2 and X3 are -C(=O)-O-, -O- or -C(=O)-R20-C(=O)-O- wherein R20 is alkylene; 0≤(a-1)

Title
Resist material and patterning process using the same
Application Number
2007-259333
Publication Number
2008-122932
Application Date
October 3, 2007
Publication Date
May 29, 2008
Inventor
Kusaki Wataru
Harada Yuji
Yoshihara Takao
Hatakeyama Jun
Assignee
Shin Etsu Chem
IPC
H01L 21/027
G03F 07/38
G03F 07/038
G03F 07/039
G03F 07/004