2003-041362 is referenced by 62 patents.

PROBLEM TO BE SOLVED: To manufacture a zinc oxide-based homologous compound film having a uniformized crystal orientation, by sputtering. SOLUTION: This method for manufacturing the zinc oxide-based homologous compound film is characterized by employing a sintered compact of polycrystals having a composition of (In1-xGax)2O3(ZnO)m, (where 0≤x≤1, a ratio of In and/or Ga to Zn is 0.1-0.67 by atom ratio, and m is an integer), which corresponds to the zinc oxide-based homologous compound, for a target, and forming a film on a substrate of alumina (0001), by sputtering in an atmosphere containing both two gases of oxygen gas and argon gas. Then the obtained C-axis oriented homologous phase (In1-xGax)2O3(ZnO)m (0≤x≤1, a ratio of In and/or Ga to Zn is 0.1-0.67, by atom ratio, m is an integer), can be confirmed to be a heteroepitaxial thin film of which the C-axis of the crystal orientation is oriented to a film thickness direction, by an X-ray pole figure, electron beam diffraction, and a high-resolution transmission electron microscopy observation, without particularly performing heat treatment after forming the film.

Method for manufacturing zinc oxide-based homologous compound film
Application Number
Publication Number
Application Date
July 27, 2001
Publication Date
February 13, 2003
Ohashi Naoki
Sakaguchi Isao
Adachi Yutaka
Hagino Takeshi
Haneda Hajime
National Institute For Materials Science
H01B 01/08
C23C 14/08