2002-246605 is referenced by 41 patents.

PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor which can increase the throughput while maintaining a sufficient electron mobility at the time of manufacturing a large-sized highly precise liquid crystal display device.SOLUTION: In this method, a gate insulating film, an i-type a-Si film, and an n+-type a-Si film are continuously formed by the plasma chemical vapor deposition method. In addition, the i-type a-Si film is formed in two layers having different deposition rates.

Method of manufacturing thin film transistor for liquid crystal display device
Application Number
Publication Number
Application Date
February 20, 2001
Publication Date
August 30, 2002
Yonekura Hiroaki
Imai Atsushi
Matsushita Electric
H01L 21/205
G02F 01/1368
H01L 29/786