2002-246605 is referenced by 41 patents.

PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor which can increase the throughput while maintaining a sufficient electron mobility at the time of manufacturing a large-sized highly precise liquid crystal display device.SOLUTION: In this method, a gate insulating film, an i-type a-Si film, and an n+-type a-Si film are continuously formed by the plasma chemical vapor deposition method. In addition, the i-type a-Si film is formed in two layers having different deposition rates.

Title
Method of manufacturing thin film transistor for liquid crystal display device
Application Number
2001-043282
Publication Number
2002-246605
Application Date
February 20, 2001
Publication Date
August 30, 2002
Inventor
Yonekura Hiroaki
Imai Atsushi
Assignee
Matsushita Electric
IPC
H01L 21/205
G02F 01/1368
H01L 29/786