2002-246580 is referenced by 47 patents.

PROBLEM TO BE SOLVED: To increase a unit area of a photodiode with no degradation in integration degree.SOLUTION: At a unit pixel, an amplifying transistor 26 and a selecting transistor 28 are stacked over a reading transistor 24 and resetting transistor 22 with an interlayer insulating film 37 in between. So, with a prescribed design rule applied, an element separation film 32 is allowed to be away from the reading transistor 24. By reducing an occupation area of a transistor region like this way, an occupation area of a photodiode is increased with no degradation in integration degree for improved optical sensitivity characteristics.

Image sensor and manufacturing method thereof
Application Number
Publication Number
Application Date
February 16, 2001
Publication Date
August 30, 2002
Hotta Masayoshi
H01L 31/10
H01L 27/088
H01L 21/8234
H01L 27/00
H01L 27/146