2434694-A cites 4 patents.

The present memory structure includes thereof a first conductor (BL), a second conductor (WL), a resistive memory cell (130) connected to the second conductor (WL), a first diode (134) connected to the resistive memory cell (130) and the first conductor (BL), and oriented in the forward direction from the resistive memory cell (130) to the first conductor (BL), and a second diode (132) connected to the resistive memory cell (130) and the first conductor (BL), in parallel with the first diode (134), and oriented in the reverse direction from the resistive memory cell (130) to the first conductor (BL). The first and second diodes (134, 132) have different threshold voltages.

Title
Diode array architecture for addressing nanoscale resistive memory arrays
Application Number
GB20070008857 20070509
Publication Number
2434694A
Application Date
May 9, 2007
Publication Date
August 1, 2007
Inventor
Avanzino Steven
US
Pangrle Suzette K
US
Cai Wei Daisy
US
Fang Tzu Ning
US
Buynoski Matthew
US
Vanbuskirk Michael A
US
Bill Colin S
US
Tripsas Nicholas H
US
Assignee
Spansion
US
IPC
H01L 27/10
H01L 27/102
H01L 27/10
H01L 27/102
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