1,274,548. Semi-conductor devices. N. S. LIDORENKO, A. P. LANDSMAN, D. S. STREBKOV, A. K. ZAITSEVA, V. V. ZADDE, and V. S. KOSAREV. 30 July, 1969, No. 38186/69. Heading H1K. A photo-electric generator comprises an array of parallelepipedal semi-conductor bodies each of which contains a P-N junction 1 lying in a plane transverse to that of the surface 6 of the generator adapted to receive radiation. Conductors 2, 4 interconnecting the bodies also lie in planes transverse to that of the surface 6. The widths of the bodies do not exceed the minority carrier diffusion length in the major part 5 of each body. Several modifications of the illustrated structure are disclosed.; The junction 1 in each body may be formed by diffusion or ion sputtering of P into P-type Si and may have parts extending parallel to and adjacent, one, two, three, four or five of the surfaces of the parallelepiped, certain of which parts lie parallel to the irradiated surface 6 of the array in some embodiments. Various conductor configurations are described, including some structures in which the major parts 5 of all the bodies are contacted by a common conductive layer extending completely across one surface of the array and insulated where necessary from the minor parts 3 of the bodies by the provision of insulating material in etched recesses in the bodies. Series, parallel, series-parallel or independently connected two-dimensional arrays of devices are also disclosed. Such arrays may, in some cases, be formed by assembling several of the onedimensional arrays together.; In one embodiment a number of Ni-plated slabs of P-type Si containing preformed junctions are brazed together using Pb or Ag foil and the pile so formed is sliced perpendicularly or obliquely to the plane of the junctions. Additional junction parts parallel to the surface to be irradiated may be formed, and parts of the conductors may be etched away to prevent short-circuits. Cr, Ni or Ag are referred to as conductor materials in connection with another embodiment. A generator made in accordance with the invention may be used as a photo-transistor or a PNPN magnetometer when part of the array of elements has been removed.