2584594-A1 is referenced by 9 patents.

[en] A method of fabricating a SiC semiconductor device (200) includes the steps of preparing a silicon carbide semiconductor (100) including a first surface (100a) having impurities implanted at least partially, forming a second surface (100b) by dry etching the first surface (100a) of the silicon carbide semiconductor (100) using gas including hydrogen gas, and forming an oxide film (126) constituting the silicon carbide semiconductor device (200) on the second surface (100b).

Title
[fr] PROCÉDÉ ET APPAREIL POUR FABRIQUER UN DISPOSITIF SEMI-CONDUCTEUR EN CARBURE DE SILICIUM
[de] VERFAHREN ZUR HERSTELLUNG EINES SILICIUMCARBIDHALBLEITERBAUELEMENTS UND VORRICHTUNG ZUR HERSTELLUNG EINES SILICIUMCARBIDHALBLEITERBAUELEMENTS
[en] METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Application Number
EP20110795436
Publication Number
2584594 (A1)
Application Date
February 23, 2011
Publication Date
April 24, 2013
Inventor
HIYOSHI TORU
JP
SHIMAZU MITSURU
JP
WADA KEIJI
JP
NAMIKAWA YASUO
JP
SHIOMI HIROMU
JP
ITOH SATOMI
JP
Assignee
SUMITOMO ELECTRIC
JP
IPC
H01L 29/78
H01L 29/12
H01L 21/316
H01L 21/304
H01L 21/302
H01L 21/336
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