1513159-A2 is referenced by 27 patents and cites 10 patents.

A composition for the formation of an electric field programmable film, the composition comprising a matrix precursor composition or a dielectric matrix material, wherein the dielectric matrix material comprises an organic polymer and/or an inorganic oxide; and an electron donor and an electron acceptor of a type and in an amount effective to provide electric field programming. The films are of utility in data storage devices.

Title
Memory devices based on electric field programmable films
Application Number
EP20040255350 20040903
Publication Number
1513159 (A2)
Application Date
September 3, 2004
Publication Date
March 9, 2005
Inventor
Szmanda Charles R
US
Ouyang Jianyong
US
Yang Yang
US
Assignee
Rohm & Haas
US
Univ California
US
IPC
G11C 13/02
H01L 51/05
H01L 27/28
H01L 27/115
H01L 27/10
H01L 21/70
H01L 21/02
G11C 13/02
C08L 101/00
C08K 05/00
C08K 03/00
H01L 51/05
H01L 27/28
H01L 27/115
H01L 27/10
H01L 21/8247
H01L 21/31
G11C 13/02
C08L 101/00
C08K 05/00
C08K 03/22
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