1170803-A2 is referenced by 51 patents and cites 2 patents.

In a trench MOSFET a conductive shield gate is formed near the bottom of the trench. The shield gate is insulated from the overlying active gate and, depending on the use of the MOSFET, is connected to a constant voltage, such as ground. The shield gate reduces the capacitance between the active gate and the drain, thereby improving the ability of the MOSFET to operate at high frequencies, whether it is operated in its linear range or as a switching device.

Title
Trench gate mosfet and method of making the same
Application Number
EP20010304968 20010607
Publication Number
1170803 (A2)
Application Date
June 7, 2001
Publication Date
January 9, 2002
Inventor
Giles Frederik
US
Korec Jacek
US
Ng Sze Him
US
Assignee
Siliconix
US
IPC
H01L 29/423
H01L 29/41
H01L 21/336
H01L 29/78
H01L 29/66
H01L 29/40
H01L 29/02
H01L 21/02
H01L 29/78
H01L 29/40
H01L 29/06
H01L 21/336
View Original Source Download PDF