1109212-A2 is referenced by 34 patents and cites 6 patents.

A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides or nitrides (26), and an interface (14) between the silicon substrate and the one or more layers of single crystal oxides or nitrides, the interface manufactured with a crystalline material which matches the lattice constant of silicon. The interface comprises an atomic layer of silicon, nitrogen, and a metal in the form MSiN2, where M is a metal. In a second embodiment, the interface comprises an atomic layer of silicon, a metal, and a mixture of nitrogen and oxygen in the form MSiÄN1-xOxÜ2, where M is a metal and X is 0<=X<1.

Title
Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon
Application Number
EP20000127588 20001215
Publication Number
1109212 (A2)
Application Date
December 15, 2000
Publication Date
June 20, 2001
Inventor
Ramdani Jamal
US
Droopad Ravindranath
US
Hallmark Jerald Allan
US
Wang Jun
US
Demdov Alexander
US
Yu Zhiyi Jimmi
US
Assignee
Motorola
US
IPC
C30B 23/02
H01L 21/316
H01L 27/105
H01L 21/70
H01L 21/02
H01L 27/105
H01L 21/8246
H01L 21/318
H01L 21/316
H01L 21/314
H01L 21/20
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