1109170-A2 is referenced by 42 patents and cites 7 patents.

A magnetic memory device comprises a memory cell assembled by first and second tunnel junction portions (11, 21) and a switch (31), each of the first and second tunnel junction portions being formed of a stack of a pinned layer in which a magnetization direction is fixed and a record layer in which a magnetization direction changes depending on an external magnetic field. A first data line (DL) is connected to a first end of the first tunnel junction portion. A second data line (/DL) is connected to the first end of the second tunnel junction portion. A bit line (BL) is connected to the second end of the first tunnel junction portion and the second end of the second tunnel junction portion via the switch.

Title
Magnetic memory device
Application Number
EP20000311242 20001215
Publication Number
1109170 (A2)
Application Date
December 15, 2000
Publication Date
June 20, 2001
Inventor
Sagoi Masayuki
JP
Saito Yoshiaki
JP
Inomata Koichiro
JP
Nakajima Kentaro
JP
Assignee
Tokyo Shibaura Electric Co
JP
IPC
G11C 11/16
H01L 27/22
G11C 11/02
H01L 27/22
G11C 11/16
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