An optical projection reduction system used in photolithography for the manufacture of semiconductor devices having a first mirror pair (M1, M2; M1', M2'; M1'', M2''), a second field mirror pair (M3, M4; M3', M4'; M3'', M4''), and a third mirror pair (M5, M6; M5', M6'; M5'', M6''). Electromagnetic radiation form a reticle or mask (10) is reflected by a first mirror pair to a second field mirror pair forming an intermediate image (24, 24', 24''). A third mirror pair re-images the intermediate image to an image plane at a wafer (22). All six mirrors are spherical or aspheric and rotationally symmetrical about an optical axis (OA). An annular ring field is obtained, a portion of which may be used in a step and scan photolithography system.; In another embodiment, weak refracting elements (R1, R2, R3) are introduced to further reduce residual aberrations allowing a higher numerical aperture. In the catoptric embodiment of the present invention, a numerical aperture of 0.25 is obtained resulting in a working resolution of 0.03 microns with electromagnetic radiation having a wavelength of 13 nanometers. The optical projection reduction systems are intended for use at extreme ultraviolet to the soft X-ray wavelength range. The present invention, provides a relatively high numerical aperture and uses substantially all reflective elements, greatly facilitating the manufacture of semiconductor devices having feature sizes below 0.25 microns.