0652600-A1 is referenced by 16 patents and cites 4 patents.

On a silicon substrate (1) is formed a silicon dioxide film (5) and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD (6). After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained.; Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

Title
Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same.
Application Number
EP19940117295 19941102
Publication Number
0652600 (A1)
Application Date
November 2, 1994
Publication Date
May 10, 1995
Inventor
Nomura Noboru
JP
Niwa Masaaki
JP
Kubota Masafumi
JP
Eriguchi Kofi
JP
Assignee
Matsushita Electric
JP
IPC
H01L 27/15
H01L 21/30
H01L 33/00
H01L 33/00
H01L 31/18
H01L 31/0248
H01L 21/02
G02B 06/124
H01L 33/00
H01L 31/18
H01L 31/0352
H01L 21/308
G02B 06/124
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