0612102-A2 is referenced by 63 patents and cites 3 patents.

Method of fabricating semiconductor devices such as thin- film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

Title
Crystallized semiconductor layer, semiconductor device using the same and process for their fabrication.
Application Number
EP19940301075 19940215
Publication Number
0612102 (A2)
Application Date
February 15, 1994
Publication Date
August 24, 1994
Inventor
Uochi Hideki
JP
Takayama Toru
JP
Zhang Hongyong
JP
Takemura Yasuhiko
JP
Yamazaki Shunpei
JP
Assignee
Semiconductor Energy Lab
JP
IPC
H01L 21/336
H01L 21/20
H01L 29/66
H01L 21/70
H01L 21/02
H01L 29/786
H01L 21/84
H01L 21/77
H01L 21/336
H01L 21/20
H01L 29/78
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