0383570-A2 is referenced by 27 patents and cites 5 patents.

In a plasma-etching method and apparatus for etching samples of e.g. semiconductor device substrates etc., a sample (24) is cooled and subjected to an etching process with a gas plasma. An acceleration voltage which accelerates ions in the gas plasma towards the sample (24) is repeatedly changed, e.g. by a controller (81). In a process based on low-temperature etching, an etching processing producing no residue, being an anisotropic and being highly selective is realized.

Title
Plasma etching method and apparatus.
Application Number
EP19900301564 19900214
Publication Number
0383570 (A2)
Application Date
February 14, 1990
Publication Date
August 22, 1990
Inventor
Fukuyama Ryooji
Sato Yoshiaki
Kawasaki Yoshinao
Kawahara Hironobu
Assignee
Hitachi
JP
IPC
H01L 21/302
H01L 21/02
H01J 37/32
H01L 21/3065
H01J 37/32
H01L 21/302
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