0363982-A2 is referenced by 28 patents and cites 4 patents.

A dry etching method comprises the steps of introducing etching and deposition gases alternately into a reaction chamber (3) at predetermined time intervals, etching the exposed surface of an article (7) to be etched and applying deposition to the surface film thereof alternately by causing the plasma generated by applying power to the etching and deposition gases introduced into the reaction chamber (3) to come into contact with the article (7) to be etched in the reaction chamber (3) in order to etch the surface. The power is applied after the passage of a predetermined time from the start of the introduction of the deposition gas and before the etching gas is introduced, and is cut off when the introduction of the etching gas is suspended.

Title
Dry etching method and apparatus.
Application Number
EP19890119069 19891013
Publication Number
0363982 (A2)
Application Date
October 13, 1989
Publication Date
April 18, 1990
Inventor
Tachi Shinichi
Tsujimoto Kazunori
Kure Tokuo
Kawakami Hiroshi
Okudaira Sadayuki
Assignee
Hitachi
JP
IPC
H01L 21/321
H01L 21/311
H01L 21/306
H01L 21/02
H01L 21/3213
H01L 21/311
H01L 21/308
H01L 21/3065
H01L 21/302
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